Development of Multidimensional Measurement Technology for Individual Interface States* in Power Semiconductors
Dr. Yoshiaki Sugimoto
Professor
Graduate School of Frontier Sciences, The University of Tokyo
*The organization and the title are those when awarded
Research summary
Dr. Sugimoto developed a multidimensional measurement technology capable of directly detecting and analyzing individual atomic-scale defects at the interface between semiconductor materials and insulating films. These defects can significantly impair the performance of next-generation power semiconductors*. Although emerging materials such as Silicon Carbide (SiC) and diamond have the potential to greatly reduce power loss, even minor interfacial disorders can degrade device performance. By advancing atomic force microscopy-based measurement techniques, the team directly detected interface defects at the atomic level and analyzed their positions and energy states. This achievement helps identify the causes of performance degradation and malfunction that had previously been difficult to pinpoint, advancing the practical application of ultra-low-loss power semiconductors.
